The NVMTS 2024 (Non-Volatile Memory Technology Symposium) was a pivotal event that gathered leading experts from both academia and industry to discuss significant advancements in non-volatile memory technologies, including Flash, MRAM, PCRAM, RRAM, and FeRAM. Keynote speakers included Prof. Cheol Seong Hwang from Seoul National University, who addressed innovations in Ferroelectric Field-Effect Transistors (FeFETs), highlighting potential improvements in memory device performance. Dr. Stefan Slesazeck from NaMLab presented on Ferroelectric Tunneling Junctions (FTJs), showcasing their unique properties for scalable and energy-efficient applications, especially in neuromorphic computing. Other distinguished speakers included Dr. Stefan Mueller discussing Ferroelectric Hafnia and its promising applications in high-performance memory devices, and Prof. Jin-Seong Park focusing on the use of ALD Oxide Semiconductors for enhancing 3D V-NAND structures. Prof. Aaron Thean from the National University of Singapore introduced the concept of Rewiring Chips to improve data processing efficiency. Additionally, Prof. Suman Datta emphasized opportunities in emerging ferroelectric memory technologies for next-generation devices.
Key industry participants included major players like Intel, Samsung Electronics, and SK Hynix, as well as Micron Technology and Tokyo Electron Ltd. These companies contributed to discussions on advanced memory solutions and semiconductor manufacturing. The symposium also featured exhibitors such as Wonik QnC and Semilab, fostering collaboration and networking among researchers and industry professionals.
“During my poster presentation on "Polarization Dependent Oxygen Vacancy Distribution in Ferroelectric Hf₀.₅Zr₀.₅O₂ Capacitors," I engaged in meaningful discussions with notable experts in the field, including Prof. Hwang, Prof. Jeon and Dr. Mueller. Key questions arose during these interactions: Prof. Datta inquired about the mechanisms behind oxygen vacancy migration under varying polarization conditions, which led me to explain the influence of built-in electric fields. I gained valuable insights into several fundamental physics concepts. I learned about the dynamics of oxygen vacancies, revealing how their migration affects device reliability and functionality. I explored energy barriers associated with vacancy movement and the significant role of built-in electric fields in shaping vacancy distribution. This understanding highlighted the challenges related to wake-up and fatigue effects in ferroelectric devices. Additionally, discussions on optimizing HZO materials reinforced the importance of precise fabrication techniques and their implications for next-generation memory technologies.” (Dr. Gunjan Yadav)